General development trends space requirements, costs, and energy efficiency and the advancement into new fields of application e. For this reason, this manual looks more closely than its predecessor at aspects pertaining to power semiconductor application and also deals with rectifier diodes and thyristors, which were last detailed in a SEMIKRON manual over 30 years ago. This manual is aimed primarily at users and is intended to consolidate experience which up till now has been contained in numerous separate articles and papers.
For reasons of clarity and where deemed necessary, theoretical background is gone into briefly in order to provide a better understanding of the subject matter. A deeper theoretical insight is provided in various highly-recommendable textbooks, some of which have been cited in the bibliography to this manual. Taking the properties of these components as a basis, the manual provides tips on how to use and interpret data sheets, as well as application notes on areas such as cooling, power layout, driver technology, protection, parallel and series connection, and the use of transistor modules in soft switching applications.
Application Manual Power Semiconductors pages of comprehensive power semiconductor knowledge. Power Electronic Systems. Back Matter Pages About this book Introduction Semiconductor power devices are the heart of power electronics. They determine the performance of power converters and allow topologies with high efficiency. Semiconductor properties, pn-junctions and the physical phenomena for understanding power devices are discussed in depth.
In practice, not only the semiconductor, but also the thermal and mechanical properties of packaging and interconnection technologies are essential to predict device behavior in circuits. Wear and aging mechanisms are identified and reliability analyses principles are developed. Unique information on destructive mechanisms, including typical failure pictures, allows assessment of the ruggedness of power devices.
Also parasitic effects, such as device induced electromagnetic interference problems, are addressed. The book concludes with modern power electronic system integration techniques and trends. Neu-Isenburg Germany 3. First he worked in the development of GTO thyristors, then in the field of fast recovery diodes. He introduced the Controlled Axial Lifetime CAL diode, is holder of several patents regarding fast diodes, and has published more than papers and conference contributions.
In he received his Ph. In he was awarded the rank of an honourable professor at the North Caucasus State Technical University in Stavropol. The Handbook addresses reliability engineering for III-V device structures, including materials and electrical characterization, reliability testing, and electronic characterization.
These last techniques are used to develop new simulation technologies for device operation and reliability, which in turn allow accurate prediction of reliability as well as the design of structures specifically for improved reliability of operation. Given that a relatively small percentage of devices will actually show failure, it is critical to both enhance the failure rate through accelerated testing and to treat the resulting reliability data correctly.
For this reason, the Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. In other words, accelerated aging is useful only if we know the failure mechanism. Also covered are standard Si reliability approaches to determine the instantaneous failure rate and mean time to failure and therefore the distribution functions of greatest relevance to the specific device technology.
Furthermore, the Handbook focuses attention on voltage and current acceleration stress mechanisms. Skip to main content Skip to table of contents. Advertisement Hide. This service is more advanced with JavaScript available.
Editors view affiliations Osamu Ueda Stephen J. Provides the first handbook to cover all aspects of compound semiconductor device reliability Systematically describes research results on reliability and materials issues of both optical and electron devices developed since Covers characterization techniques needed to understand failure mechanisms in compound semiconductor devices Includes experimental approaches in reliability studies Presents case studies of laser degradation and HEMT degradation.
Front Matter Pages i-xv. Front Matter Pages Reliability Testing of Semiconductor Optical Devices. Pages Failure Analysis of Semiconductor Optical Devices. Mechanism of Defect Reactions in Semiconductors. Reliability Studies in the Real World. Min Chu, Andrew D.
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